A.W. Morse

Advances in SiC materials and devices: an industrial point of view

R.R. Siergiej, R.C. Clarke, S. Sriram et al. · Materials Science and Engineering B · 1999 · 84 citations

Engineering, Materials Engineering, Materials Science +14

S-Band Operation of SiC Power MESFET With 20 W (4.4 W/mm) Output Power and 60% PAE

H.G. Henry, G. Augustine, G. DeSalvo et al. · IEEE Transactions on Electron Devices · 2004 · 54 citations

Engineering, Electrical Engineering, Microelectronics +16

Recent advances in high temperature, high frequency SiC devices

R.C. Clarke, C.D. Brandt, S. Sriram et al. · 2002 · 22 citations

Engineering, Electrical Engineering, Materials Science +17

SiC electronics

Anant Agarwal, G. Augustine, V. Balakrishna et al. · 2002 · 21 citations

Engineering, Electrical Engineering, Materials Science +17

Application of high power silicon carbide transistors at radar frequencies

A.W. Morse, P.M. Esker, R.C. Clarke et al. · 2002 · 20 citations

Engineering, Electrical Engineering, Materials Science +17