S. Sriram

SiC and GaN wide bandgap semiconductor materials and devices

Albert A. Burk, Michael O’Loughlin, R.R. Siergiej et al. · Solid-State Electronics · 1999 · 90 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +4

Large diameter 6H-SiC for microwave device applications

H. McD. Hobgood, D.L. Barrett, J.P. McHugh et al. · Journal of Crystal Growth · 1994 · 84 citations

Electrical Engineering, Engineering, Nanoelectronics +3

Advances in SiC materials and devices: an industrial point of view

R.R. Siergiej, R.C. Clarke, S. Sriram et al. · Materials Science and Engineering B · 1999 · 83 citations

Materials Science, Sic Materials, Electrical Engineering +5

4H-SiC MESFET's with 42 GHz f/sub max/

S. Sriram, G. Augustine, Albert A. Burk et al. · IEEE Electron Device Letters · 1996 · 70 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +14

Reverse leakage current calculations for SiC Schottky contacts

J. Crofton, S. Sriram · IEEE Transactions on Electron Devices · 1996 · 67 citations

Reverse Leakage Currents, Electrical Engineering, Engineering +12