SiC and GaN wide bandgap semiconductor materials and devices

Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

H. Morkoç̌, S. Strite, Guangjun Gao et al. · Journal of Applied Physics · 1994 · 2.7K citations

Engineering, Electrical Engineering, Materials Science +17

InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Applied Physics Letters · 1998 · 732 citations

Engineering, Electrical Engineering, Materials Science +17

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Okhyun Nam, M. D. Bremser, Tsvetanka Zheleva et al. · Applied Physics Letters · 1997 · 651 citations

Engineering, Materials Engineering, Materials Science +17

Field-effect transistor versus analog transistor (static induction transistor)

Jun‐ichi Nishizawa, Tadashi Terasaki, J. Shibata · IEEE Transactions on Electron Devices · 1975 · 409 citations

Engineering, Electrical Engineering, Analog Electronics +14

Conductivity Anisotropy in Epitaxial 6H and 4H Sic

W. J. Schaffer, Gerry Negley, K. G. Irvine et al. · MRS Proceedings · 1994 · 289 citations

Natural Sciences, Materials Science, Physics +14