M. F. MacMillan

SiC and GaN wide bandgap semiconductor materials and devices

Albert A. Burk, Michael O’Loughlin, R.R. Siergiej et al. · Solid-State Electronics · 1999 · 90 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +4

Advances in SiC materials and devices: an industrial point of view

R.R. Siergiej, R.C. Clarke, S. Sriram et al. · Materials Science and Engineering B · 1999 · 83 citations

Materials Science, Sic Materials, Electrical Engineering +5

Growth of 6H and 4H–SiC by sublimation epitaxy

Mikael Syväjärvi, R. Yakimova, M. Tuominen et al. · Journal of Crystal Growth · 1999 · 83 citations

Materials Science, Sublimation Epitaxy, Materials Engineering +5

Determination of the electric field in 4H/3C/4H-SiC quantum wells due to spontaneous polarization in the 4H SiC matrix

Song Bai, Robert P. Devaty, W. J. Choyke et al. · Applied Physics Letters · 2003 · 66 citations

Quantum Science, Photoluminescence, Engineering +14

Aluminum acceptor four particle bound exciton complex in 4<i>H</i>, 6<i>H</i>, and 3<i>C</i> SiC

L. L. Clemen, Robert P. Devaty, M. F. MacMillan et al. · Applied Physics Letters · 1993 · 59 citations

Aluminium Nitride, Engineering, Aluminum Acceptor Four +16