Growth of 6H and 4H–SiC by sublimation epitaxy - Concepedia

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Growth of 6H and 4H–SiC by sublimation epitaxy

83

Citations

7

References

1999

Year

Mikael Syväjärvi, R. Yakimova, M. Tuominen, A. Kakanakova‐Georgieva, M. F. MacMillan, Anne Henry, Q. Wahab, Erik Janzén

Journal of Crystal Growth

Materials ScienceSublimation EpitaxyMaterials EngineeringEngineeringApplied PhysicsMolecular Beam EpitaxyEpitaxial GrowthCarbide

References

	Year	Citations

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