Growth of 6H and 4H–SiC by sublimation epitaxy

Thermodynamic Study of SiC Utilizing a Mass Spectrometer

J. Drowart, G. De Maria, Mark G. Inghram · The Journal of Chemical Physics · 1958 · 372 citations

Natural Sciences, Chemistry, Materials Science +17

Silicon Carbide Electronic Materials and Devices

Michael A. Capano, R.J. Trew · MRS Bulletin · 1997 · 148 citations

Engineering, Materials Engineering, Materials Science +12

SiC Dopant Incorporation Control Using Site-Competition CVD

David Larkin · physica status solidi (b) · 1997 · 140 citations

Engineering, Materials Engineering, Materials Science +17

Epitaxial growth of silicon carbide layers by sublimation „sandwich method” (I) growth kinetics in vacuum

Yu. A. Vodakov, E. N. Mokhov, M.G. Ramm et al. · Kristall und Technik · 1979 · 112 citations

Natural Sciences, Materials Engineering, Materials Science +17

Optical Characterization of Silicon Carbide Polytypes

Robert P. Devaty, W. J. Choyke · physica status solidi (a) · 1997 · 108 citations

Natural Sciences, Materials Science, Physics +17