Concepedia

Advances in SiC materials and devices: an industrial point of view

R.R. Siergiej, R.C. Clarke, S. Sriram, Anant Agarwal, R. Bojko, A.W. Morse, V. Balakrishna, M. F. MacMillan, Albert A. Burk, C.D. Brandt

Materials Science and Engineering B · 1999 · 84 citations · 11 references

Concepts

EngineeringMaterials EngineeringMaterials ScienceCeramic MaterialsSemiconductor DevicesSemiconductor MaterialsCeramic ProcessingCeramic TechnologyMicrostructure ControlSemiconductor Device MaterialsSilicon MaterialsWide Band Gap SemiconductorsSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Carbide Crystal GrowthSilicon Carbide Power DevicesSilicon Device Materials

References

11

Investigation of growth processes of ingots of silicon carbide single crystals

Yu. M. Tairov, V. F. Tsvetkov · Journal of Crystal Growth · 1978 · 570 citations

Natural Sciences, Materials Engineering, Materials Science +14

Conductivity Anisotropy in Epitaxial 6H and 4H Sic

W. J. Schaffer, Gerry Negley, K. G. Irvine et al. · MRS Proceedings · 1994 · 289 citations

Natural Sciences, Materials Science, Physics +14

Efficient Peltier refrigeration by a pair of normal metal/insulator/superconductor junctions

Mikko Leivo, J. P. Pekola, D. V. Averin · Applied Physics Letters · 1996 · 276 citations · Full text

Natural Sciences, Electrical Engineering, Materials Science +13

Semi-insulating 6H–SiC grown by physical vapor transport

H. McD. Hobgood, R Glass, G. Augustine et al. · Applied Physics Letters · 1995 · 161 citations

Engineering, Materials Engineering, Materials Science +17

Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers

J. A. Powell, David Larkin, L. G. Matus et al. · Applied Physics Letters · 1990 · 125 citations

Natural Sciences, Materials Engineering, Materials Science +17