C.D. Brandt

1.1 kV 4H-SiC power UMOSFETs

Anant Agarwal, Jeff B. Casady, L.B. Rowland et al. · IEEE Electron Device Letters · 1997 · 124 citations

Room Temperature, Electrical Engineering, Semiconductor Device +13

SiC and GaN wide bandgap semiconductor materials and devices

Albert A. Burk, Michael O’Loughlin, R.R. Siergiej et al. · Solid-State Electronics · 1999 · 90 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +4

Large diameter 6H-SiC for microwave device applications

H. McD. Hobgood, D.L. Barrett, J.P. McHugh et al. · Journal of Crystal Growth · 1994 · 84 citations

Electrical Engineering, Engineering, Nanoelectronics +3

Advances in SiC materials and devices: an industrial point of view

R.R. Siergiej, R.C. Clarke, S. Sriram et al. · Materials Science and Engineering B · 1999 · 83 citations

Materials Science, Sic Materials, Electrical Engineering +5

700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's)

Anant Agarwal, Jeff B. Casady, L.B. Rowland et al. · IEEE Electron Device Letters · 1997 · 79 citations

Electrical Engineering, Semiconductor Device, Engineering +13