H.G. Henry

S-Band Operation of SiC Power MESFET With 20 W (4.4 W/mm) Output Power and 60% PAE

H.G. Henry, G. Augustine, G. DeSalvo et al. · IEEE Transactions on Electron Devices · 2004 · 54 citations

Engineering, Electrical Engineering, Microelectronics +16

The Super-Lattice Castellated Field Effect Transistor (SLCFET): A novel high performance Transistor topology ideal for RF switching

Robert S. Howell, Eric J. Stewart, R.G. Freitag et al. · 2014 · 53 citations

Engineering, Electrical Engineering, Microelectronics +10

RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz

Gregg H. Jessen, J. Gillespie, G. D. Via et al. · IEEE Electron Device Letters · 2007 · 31 citations

Engineering, Electrical Engineering, Materials Science +17

Low Loss, High Performance 1-18 GHz SPDT Based on the Novel Super-Lattice Castellated Field Effect Transistor (SLCFET)

Robert S. Howell, Eric J. Stewart, R.G. Freitag et al. · 2014 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

Characterization of alloyed AuGe/Ni/Au ohmic contacts to n-doped GaAs by measurement of transfer length and under the contact sheet resistance

H.G. Henry · IEEE Transactions on Electron Devices · 1989 · 28 citations

Engineering, Electrical Engineering, Materials Science +17