RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz

Abstract

Unstrained high-electron mobility transistors (HEMTs) were fabricated from InAlN/GaN on semi-insulating SiC substrates. The devices had 0.24-mum T-gates with a total width of 2times150 mum. Final passivated performance values for these devices are I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> =1279 mA/mm, I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DSS</sub> =1182 mA/mm, R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> =0.43 Omegamiddotmm, rho <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</sub> =315 Omega/sq, f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> =45 GHz, f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max(MAG) </sub> =64 GHz, and g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> =268 mS/mm. Continuous-wave power measurements at 10 GHz produced P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</sub> =3.8 W/mm, G <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> =8.6 dB, and PAE=30% at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> =20 V at 25% I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DSS</sub> . To our knowledge, these are the first power measurements reported at 10 GHz for this material