M. E. Aumer

High optical quality AlInGaN by metalorganic chemical vapor deposition

M. E. Aumer, S. F. LeBoeuf, F. G. McIntosh et al. · Applied Physics Letters · 1999 · 101 citations · Full text

Materials Engineering, Materials Science, Aluminium Nitride +14

Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures

M. E. Aumer, S. F. LeBoeuf, S. M. Bedair et al. · Applied Physics Letters · 2000 · 95 citations

Optical Materials, Engineering, Optoelectronic Devices +19

Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells

M. E. Aumer, S. F. LeBoeuf, Baxter Moody et al. · Applied Physics Letters · 2001 · 54 citations · Full text

Wide-bandgap Semiconductor, Engineering, Light Emission Energy +17

Earbud-Based Sensor for the Assessment of Energy Expenditure, HR, and V˙O2max

Steven LeBoeuf, M. E. Aumer, William E. Kraus et al. · Medicine & Science in Sports & Exercise · 2014 · 41 citations · Full text

RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz

Gregg H. Jessen, J. Gillespie, G. D. Via et al. · IEEE Electron Device Letters · 2007 · 31 citations

Wide-bandgap Semiconductor, Engineering, Inaln/gan Unstrained Hemts +17