Baxter Moody

On the origin of the 265 nm absorption band in AlN bulk crystals

Ramón Collazo, Jinqiao Xie, Benjamin E. Gaddy et al. · Applied Physics Letters · 2012 · 158 citations

Aluminium Nitride, Optical Materials, Engineering +23

Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

Yoshinao Kumagai, Yuki Kubota, Toru Nagashima et al. · Applied Physics Express · 2012 · 133 citations

Materials Science, Materials Engineering, Aluminium Nitride +14

Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Toru Kinoshita, Toshiyuki Obata, Toru Nagashima et al. · Applied Physics Express · 2013 · 130 citations

Aluminium Nitride, White Oled, Electrical Engineering +15

Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Toru Kinoshita, Keiichiro Hironaka, Toshiyuki Obata et al. · Applied Physics Express · 2012 · 129 citations

Aluminium Nitride, Optical Materials, Engineering +16

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

Rafael Dalmau, Baxter Moody, R. Schlesser et al. · Journal of The Electrochemical Society · 2011 · 126 citations

Materials Science, Materials Engineering, Aluminium Nitride +14