Applied Physics Express · 2013 · 131 citations · 21 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor DevicesDevice ReliabilityDislocations In SemiconductorsLight SourcesLight-emitting DiodesSemiconductor Device MaterialsSemiconductor ReliabilityAluminum Nitride DevicesDislocation DensityDislocation NetworksGallium Nitride Light-emitting DiodesHydride Vapor Phase EpitaxyLight-emitting DevicesPower OutputUltraviolet Light-emitting Diodes
The reliability and output power of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) fabricated on AlN substrates prepared by hydride vapor phase epitaxy are reported. TEM analysis revealed that dislocation density in LED layers, except the p-GaN layer, was below 106 cm-2. DUV-LEDs emitting at 261 nm exhibited an output power of 10.8 mW at 150 mA. The lifetime of these LEDs was estimated to be over 10,000 h for cw operation at 50 mA. No significant acceleration of output power decay at higher operation currents was observed. The estimated lifetime at the operation current of 150 mA was over 5,000 h.
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Hideki Hirayama, Yusuke Tsukada, Tetsutoshi Maeda et al. · Applied Physics Express · 2010 · 297 citations
On the origin of the 265 nm absorption band in AlN bulk crystals
Ramón Collazo, Jinqiao Xie, Benjamin E. Gaddy et al. · Applied Physics Letters · 2012 · 163 citations