Toru Nagashima

On the origin of the 265 nm absorption band in AlN bulk crystals

Ramón Collazo, Jinqiao Xie, Benjamin E. Gaddy et al. · Applied Physics Letters · 2012 · 158 citations

Aluminium Nitride, Optical Materials, Engineering +23

Relationship between Formation Conditions, Properties, and Crystallite Size of Boehmite

Kiyoshi Okada, Toru Nagashima, Yoshikazu Kameshima et al. · Journal of Colloid and Interface Science · 2002 · 134 citations

Materials Science, Engineering, Applied Physics +6

Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

Yoshinao Kumagai, Yuki Kubota, Toru Nagashima et al. · Applied Physics Express · 2012 · 133 citations

Materials Science, Materials Engineering, Aluminium Nitride +14

Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Toru Kinoshita, Toshiyuki Obata, Toru Nagashima et al. · Applied Physics Express · 2013 · 130 citations

Aluminium Nitride, White Oled, Electrical Engineering +15

Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Toru Kinoshita, Keiichiro Hironaka, Toshiyuki Obata et al. · Applied Physics Express · 2012 · 129 citations

Aluminium Nitride, Optical Materials, Engineering +16