F. G. McIntosh

Effect of hydrogen on the indium incorporation in InGaN epitaxial films

E. L. Piner, M. K. Behbehani, N. A. El-Masry et al. · Applied Physics Letters · 1997 · 135 citations

Engineering, Ingan Epitaxial Films, Chemical Deposition +16

High optical quality AlInGaN by metalorganic chemical vapor deposition

M. E. Aumer, S. F. LeBoeuf, F. G. McIntosh et al. · Applied Physics Letters · 1999 · 101 citations · Full text

Materials Engineering, Materials Science, Aluminium Nitride +14

Growth and characterization of AlInGaN quaternary alloys

F. G. McIntosh, K. S. Boutros, J. C. Roberts et al. · Applied Physics Letters · 1996 · 97 citations

Aluminium Nitride, Engineering, Chemical Composition +18

Growth and characterization of In-based nitride compounds

S. M. Bedair, F. G. McIntosh, J. C. Roberts et al. · Journal of Crystal Growth · 1997 · 65 citations

Aluminium Nitride, Inorganic Chemistry, Boron Nitride +2

High quality InGaN films by atomic layer epitaxy

K. S. Boutros, F. G. McIntosh, J. C. Roberts et al. · Applied Physics Letters · 1995 · 50 citations

Materials Science, Materials Engineering, Epitaxial Growth +14