K. S. Boutros

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

Rongming Chu, A. Corrion, M Chen et al. · IEEE Electron Device Letters · 2011 · 348 citations

Semiconductor Technology, Semiconductor Devices, Electrical Engineering +9

Schottky barrier engineering in III–V nitrides via the piezoelectric effect

Edward T. Yu, X. Z. Dang, L. S. Yu et al. · Applied Physics Letters · 1998 · 140 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Effect of hydrogen on the indium incorporation in InGaN epitaxial films

E. L. Piner, M. K. Behbehani, N. A. El-Masry et al. · Applied Physics Letters · 1997 · 135 citations

Engineering, Ingan Epitaxial Films, Chemical Deposition +16

Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition

Tamotsu Hashizume, E. Alekseev, Dimitris Pavlidis et al. · Journal of Applied Physics · 2000 · 123 citations · Full text

Materials Science, Semiconductors, Electrical Engineering +13

Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor

X. Z. Dang, P.M. Asbeck, Edward T. Yu et al. · Applied Physics Letters · 1999 · 100 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +8