K. S. Boutros - Concepedia

Author

K. S. Boutros

HRL Laboratories (United States)

Also Known As

K Boutros, K. Boutros, K. S. Boutros, K.S. Boutros, Karim Boutros, Karim S. Boutros

Publications

2.4K

Citations

H-Index

Concepts

All Affiliations

HRL Laboratories (United States)Rockwell Automation (United States)University of California San Diego North Carolina State University Boston University

About

K. S. Boutros is an author at HRL Laboratories (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	25	42	2.2K
2	Applied Physics	21	34	1.9K
3	Electrical Engineering	21	34	1.8K
4	Chemistry	4	4	232
5	Chemical Engineering	2	2	155

K. S. Boutros

Publications

2.3K

Citations

H-Index

Page 1

	Year	Citations
1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance Rongming Chu, A. Corrion, M Chen, IEEE Electron Device Letters Semiconductor TechnologySemiconductor DevicesElectrical EngineeringEngineeringField Plates	2011	348
Schottky barrier engineering in III–V nitrides via the piezoelectric effect Edward T. Yu, X. Z. Dang, L. S. Yu, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	1998	140
Effect of hydrogen on the indium incorporation in InGaN epitaxial films E. L. Piner, M. K. Behbehani, N. A. El-Masry, Applied Physics Letters EngineeringIngan Epitaxial FilmsChemical DepositionChemical EngineeringIndium Incorporation	1997	135
Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition Tamotsu Hashizume, E. Alekseev, Dimitris Pavlidis, Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringAluminium NitrideEngineering	2000	123
Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor X. Z. Dang, P.M. Asbeck, Edward T. Yu, Applied Physics Letters Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied Physics	1999	100
Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates L. S. Yu, D. Qiao, S. S. Lau, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringSemiconductor TechnologyEngineering	1998	98
Growth and characterization of AlInGaN quaternary alloys F. G. McIntosh, K. S. Boutros, J. C. Roberts, Applied Physics Letters Aluminium NitrideEngineeringChemical CompositionAlingan Quaternary AlloysChemistry	1996	97
Persistent photoconductivity and defect levels in <i>n</i>-type AlGaN/GaN heterostructures X. Z. Dang, Chundong Wang, Edward T. Yu, Applied Physics Letters Wide-bandgap SemiconductorAluminium NitrideOptical MaterialsEngineeringOptoelectronic Devices	1998	78
Gate‐recessed normally‐off GaN‐on‐ Si HEMT using a new O<sub>2</sub>‐BCl<sub>3</sub> digital etching technique Shawn D. Burnham, K. S. Boutros, P. Hashimoto, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesBcl 3Engineering	2010	77
Growth and characterization of In-based nitride compounds S. M. Bedair, F. G. McIntosh, J. C. Roberts, Journal of Crystal Growth Aluminium NitrideInorganic ChemistryBoron NitrideIn-based Nitride CompoundsChemistry	1997	65

Page 1