X. Z. Dang

Spontaneous and piezoelectric polarization effects in III–V nitride heterostructures

Edward T. Yu, X. Z. Dang, P.M. Asbeck et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 220 citations

Oxide Heterostructures, Semiconductors, Electrical Engineering +13

Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors

Eric J Miller, X. Z. Dang, Edward T. Yu · Journal of Applied Physics · 2000 · 201 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7

Schottky barrier engineering in III–V nitrides via the piezoelectric effect

Edward T. Yu, X. Z. Dang, L. S. Yu et al. · Applied Physics Letters · 1998 · 140 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor

Eric J Miller, X. Z. Dang, H. H. Wieder et al. · Journal of Applied Physics · 2000 · 119 citations

Wide-bandgap Semiconductor, Electrical Engineering, Capacitance Dispersion Studies +11

Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor

X. Z. Dang, P.M. Asbeck, Edward T. Yu et al. · Applied Physics Letters · 1999 · 100 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +8