Applied Physics Letters · 1998 · 141 citations · 10 references
EngineeringMaterials EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDopingIii-v SemiconductorsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsWide-bandgap SemiconductorsBarrier HeightsHeterostructure DevicesHeterostructure Field-effect TransistorsHeterostructure TransistorsPiezoelectric EffectSchottky Barrier Height EngineeringSchottky BarriersSchottky Contacts
A method for enhancing effective Schottky barrier heights in III–V nitride heterostructures based on the piezoelectric effect is proposed, demonstrated, and analyzed. Two-layer GaN/AlxGa1−xN barriers within heterostructure field-effect transistor epitaxial layer structures are shown to possess significantly larger effective barrier heights than those for AlxGa1−xN, and the influence of composition, doping, and layer thicknesses is assessed. A GaN/Al0.25Ga0.75N barrier structure optimized for heterojunction field-effect transistors is shown to yield a barrier height enhancement of 0.37 V over that for Al0.25Ga0.75N. Corresponding reductions in forward-bias current and reverse-bias leakage are observed in current–voltage measurements performed on Schottky diodes.
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Piezoelectric charge densities in AlGaN/GaN HFETs
P.M. Asbeck, Edward T. Yu, S. S. Lau et al. · Electronics Letters · 1997 · 277 citations
AlGaN/GaN HEMTs grown on SiC substrates
S.C. Binari, Joan M. Redwing, G. Kelner et al. · Electronics Letters · 1997 · 161 citations