S. S. Lau

Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors

Edward T. Yu, G.J. Sullivan, P.M. Asbeck et al. · Applied Physics Letters · 1997 · 362 citations

Engineering, Electrical Engineering, Materials Science +17

Piezoelectric charge densities in AlGaN/GaN HFETs

P.M. Asbeck, Edward T. Yu, S. S. Lau et al. · Electronics Letters · 1997 · 277 citations

Engineering, Materials Engineering, Materials Science +13

Spontaneous and piezoelectric polarization effects in III–V nitride heterostructures

Edward T. Yu, X. Z. Dang, P.M. Asbeck et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 223 citations

Engineering, Materials Engineering, Materials Science +17

The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes

L. S. Yu, Q. Z. Liu, D. Qiao et al. · Journal of Applied Physics · 1998 · 192 citations

Engineering, Electrical Engineering, Materials Science +17

Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction

D. Qiao, L. S. Yu, S. S. Lau et al. · Journal of Applied Physics · 2000 · 151 citations

Engineering, Materials Engineering, Materials Science +17