Journal of Applied Physics · 1998 · 192 citations · 15 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportCurrent-voltage CharacteristicsQuantum TunnelingSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsCurrent-voltage RelationsSchottky Barrier ContactsSchottky BarriersTemperature DependenceTunneling BarriersTunneling CurrentTunneling EffectsTunneling In Semiconductors
The temperature dependence of the current–voltage characteristics of Ni–GaN Schottky barriers have been measured and analyzed. It was found that the enhanced tunneling component in the transport current of metal-GaN Schottky barrier contacts is a likely explanation for the large scatter in the measured Richardson constant.
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High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN
Lei Wang, M. I. Nathan, T-H. Lim et al. · Applied Physics Letters · 1996 · 258 citations
Wave Mechanics of Crystalline Solids
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Fundamental optical transitions in GaN
G. D. Chen, M. Smith, J. Y. Lin et al. · Applied Physics Letters · 1996 · 199 citations