D. Qiao

Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors

Edward T. Yu, G.J. Sullivan, P.M. Asbeck et al. · Applied Physics Letters · 1997 · 361 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electron Concentration Profiles +8

The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes

L. S. Yu, Q. Z. Liu, D. Qiao et al. · Journal of Applied Physics · 1998 · 192 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +8

Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction

D. Qiao, L. S. Yu, S. S. Lau et al. · Journal of Applied Physics · 2000 · 151 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Engineering +17

Schottky barrier engineering in III–V nitrides via the piezoelectric effect

Edward T. Yu, X. Z. Dang, L. S. Yu et al. · Applied Physics Letters · 1998 · 140 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Microstructure of Ti/Al ohmic contacts for n-AlGaN

S. Ruvimov, Z. Liliental‐Weber, J. Washburn et al. · Applied Physics Letters · 1998 · 131 citations

Materials Science, Materials Engineering, Electrical Engineering +12