D. Qiao - Concepedia

Author

D. Qiao

University of California San Diego

Also Known As

D Qiao, D. J. Qiao, D. QIAO, D. Qiao, Dahai Qiao, Dexin Qiao, Diane Qiao

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

University of California San Diego Oak Ridge National Laboratory Kansas State University Rockwell Automation (United States)Lawrence Berkeley National Laboratory

About

D. Qiao is an author at University of California San Diego specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	17	1.6K
2	Applied Physics	15	17	1.6K
3	Electrical Engineering	12	13	1.3K
4	Materials Engineering	4	4	459
5	Chemistry	1	1	151

D. Qiao

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors Edward T. Yu, G.J. Sullivan, P.M. Asbeck, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringElectron Concentration ProfilesEngineeringApplied Physics	1997	361
The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes L. S. Yu, Q. Z. Liu, D. Qiao, Journal of Applied Physics Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied Physics	1998	192
Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction D. Qiao, L. S. Yu, S. S. Lau, Journal of Applied Physics Wide-bandgap SemiconductorAluminium NitrideEngineeringChemistrySemiconductors	2000	151
Schottky barrier engineering in III–V nitrides via the piezoelectric effect Edward T. Yu, X. Z. Dang, L. S. Yu, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	1998	140
Microstructure of Ti/Al ohmic contacts for n-AlGaN S. Ruvimov, Z. Liliental‐Weber, J. Washburn, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering	1998	131
Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates L. S. Yu, D. Qiao, S. S. Lau, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringSemiconductor TechnologyEngineering	1998	98
A study of the Au/Ni ohmic contact on p-GaN D. Qiao, L. S. Yu, S. S. Lau, Journal of Applied Physics Materials ScienceAluminium NitrideEngineeringPhysicsNanotechnology	2000	93
Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the “advancing” Al/Ti metallization D. Qiao, Z. F. Guan, Jeremy G. Carlton, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringAluminium NitrideEngineering	1999	79
Transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructures D. Qiao, L. S. Yu, Lijun Jia, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsNanoelectronics	2002	67
Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure L. S. Yu, D. Qiao, S. S. Lau, Applied Physics Letters Aluminium NitrideWide-bandgap SemiconductorElectrical EngineeringSchottky Barrier HeightEngineering	1998	54

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