AlGaN/GaN HEMTs grown on SiC substrates

Abstract

The fabrication and characterisation of AlGaN/GaN HEMTs grown on SiC substrates are described. These devices have a transconductance of 70 mS/mm and a gate breakdown voltage in excess of 100 V. The HEMTs have a hard pinch-off with nearly ideal subthreshold characteristics. An fT of 6 GHz and an fmax of 11 GHz were measured for 1 µm gate length devices.