W. Kruppa

Trapping effects and microwave power performance in AlGaN/GaN HEMTs

S.C. Binari, K. Ikossi, J.A. Roussos et al. · IEEE Transactions on Electron Devices · 2001 · 632 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

AlGaN/GaN HEMTs grown on SiC substrates

S.C. Binari, Joan M. Redwing, G. Kelner et al. · Electronics Letters · 1997 · 160 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +8

Microwave performance of GaN MESFETs

S.C. Binari, L.B. Rowland, W. Kruppa et al. · Electronics Letters · 1994 · 153 citations

Wide-bandgap Semiconductor, Electrical Engineering, Microwave Performance +8

Fabrication and characterization of GaN FETs

S.C. Binari, W. Kruppa, H.B. Dietrich et al. · Solid-State Electronics · 1997 · 150 citations

Electrical Engineering, Engineering, Applied Physics +3

AlSb/InAs HEMT's for low-voltage, high-speed applications

J.B. Boos, W. Kruppa, B. R. Bennett et al. · IEEE Transactions on Electron Devices · 1998 · 136 citations · Full text

Alsb Buffer Layer, Electrical Engineering, Alsb/inas Hemt +13