H.B. Dietrich

Trapping effects and microwave power performance in AlGaN/GaN HEMTs

S.C. Binari, K. Ikossi, J.A. Roussos et al. · IEEE Transactions on Electron Devices · 2001 · 632 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Fabrication and characterization of GaN FETs

S.C. Binari, W. Kruppa, H.B. Dietrich et al. · Solid-State Electronics · 1997 · 150 citations

Electrical Engineering, Engineering, Applied Physics +3

GaN FETs for microwave and high-temperature applications

Steven C. Binari, K. Doverspike, G. Kelner et al. · Solid-State Electronics · 1997 · 144 citations

Electrical Engineering, Engineering, Applied Physics +2

H, He, and N implant isolation of n-type GaN

S.C. Binari, H.B. Dietrich, G. Kelner et al. · Journal of Applied Physics · 1995 · 138 citations

Materials Science, Materials Engineering, Electrical Engineering +12

AlSb/InAs HEMT's for low-voltage, high-speed applications

J.B. Boos, W. Kruppa, B. R. Bennett et al. · IEEE Transactions on Electron Devices · 1998 · 136 citations · Full text

Alsb Buffer Layer, Electrical Engineering, Alsb/inas Hemt +13