Steven C. Binari

GaN FETs for microwave and high-temperature applications

Steven C. Binari, K. Doverspike, G. Kelner et al. · Solid-State Electronics · 1997 · 145 citations

Engineering, Electrical Engineering, Materials Science +14

High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates

David J. Meyer, David A. Deen, David F. Storm et al. · IEEE Electron Device Letters · 2013 · 57 citations

Engineering, Electrical Engineering, Materials Science +17

Electrochemical Patterning of Amorphous Carbon on Diamond

Mike Marchywka, Pehr E. Pehrsson, Steven C. Binari et al. · Journal of The Electrochemical Society · 1993 · 54 citations

Natural Sciences, Materials Engineering, Materials Science +12

Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

David A. Deen, David F. Storm, David J. Meyer et al. · Applied Physics Letters · 2014 · 33 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

AlN/GaN HEMTs with high‐κ ALD HfO₂ or Ta₂O₅ gate insulation

David A. Deen, David F. Storm, David J. Meyer et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2011 · 31 citations · Full text

Engineering, Electrical Engineering, Materials Science +17