J.B. Boos

AlSb/InAs HEMT's for low-voltage, high-speed applications

J.B. Boos, W. Kruppa, B. R. Bennett et al. · IEEE Transactions on Electron Devices · 1998 · 136 citations · Full text

Alsb Buffer Layer, Electrical Engineering, Alsb/inas Hemt +13

Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3

Ahmed I. Ali, H. S. Madan, Alexander P. Kirk et al. · Applied Physics Letters · 2010 · 104 citations · Full text

Aluminium Nitride, Engineering, Elemental Sb +16

Mobility enhancement in strained p-InGaSb quantum wells

B. R. Bennett, Mario G. Ancona, J.B. Boos et al. · Applied Physics Letters · 2007 · 100 citations

Wide-bandgap Semiconductor, Categoryquantum Electronics, Electrical Engineering +13

Optimization of the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{GaSb}$ Interface and a High-Mobility GaSb pMOSFET

Aneesh Nainani, Toshifumi Irisawa, Ze Yuan et al. · IEEE Transactions on Electron Devices · 2011 · 93 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

High-Current Photodetectors as Efficient, Linear, and High-Power RF Output Stages

D.A. Tulchinsky, J.B. Boos, Doewon Park et al. · Journal of Lightwave Technology · 2008 · 78 citations

Photonics, Electrical Engineering, Engineering +14