Fabrication and characterization of GaN FETs

Monte Carlo simulation of electron transport in gallium nitride

Boris Gelmont, K. Kim, M. S. Shur · Journal of Applied Physics · 1993 · 271 citations

Engineering, Materials Engineering, Materials Science +17

Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

M. Asif Khan, Q. Chen, Jinwei Yang et al. · IEEE Electron Device Letters · 1996 · 180 citations

Engineering, Electrical Engineering, Materials Science +17

Low interface trap density for remote plasma deposited SiO2 on <i>n</i>-type GaN

H. C. Casey, G. G. Fountain, R. G. Alley et al. · Applied Physics Letters · 1996 · 178 citations

Engineering, Materials Engineering, Materials Science +17

Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors

M. Asif Khan, Q. Chen, C. J. Sun et al. · Applied Physics Letters · 1996 · 177 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

Current/voltage characteristic collapse in AlGaN/GaNheterostructure insulatedgate field effect transistors at high drain bias

M. Asif Khan, M. S. Shur, Q.C. Chen et al. · Electronics Letters · 1994 · 174 citations

Engineering, Electrical Engineering, Materials Science +17