A. E. Wickenden

Trapping effects and microwave power performance in AlGaN/GaN HEMTs

S.C. Binari, K. Ikossi, J.A. Roussos et al. · IEEE Transactions on Electron Devices · 2001 · 638 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

P. B. Klein, S.C. Binari, K. Ikossi et al. · Applied Physics Letters · 2001 · 279 citations

Engineering, Materials Engineering, Materials Science +17

Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

D. D. Koleske, A. E. Wickenden, R.L. Henry et al. · Journal of Crystal Growth · 2002 · 272 citations

Engineering, Materials Engineering, Materials Science +14

GaN decomposition in H2 and N2 at MOVPE temperatures and pressures

D. D. Koleske, A. E. Wickenden, R.L. Henry et al. · Journal of Crystal Growth · 2001 · 231 citations

Engineering, Materials Engineering, Materials Science +9

Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors

P. B. Klein, Jaime A. Freitas, S.C. Binari et al. · Applied Physics Letters · 1999 · 189 citations

Engineering, Electrical Engineering, Materials Science +17