D. D. Koleske

Trapping effects and microwave power performance in AlGaN/GaN HEMTs

S.C. Binari, K. Ikossi, J.A. Roussos et al. · IEEE Transactions on Electron Devices · 2001 · 632 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers

S. R. Lee, A. M. West, Andrew A. Allerman et al. · Applied Physics Letters · 2005 · 287 citations

Materials Engineering, Materials Science, Aln Heterolayers +15

Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

P. B. Klein, S.C. Binari, K. Ikossi et al. · Applied Physics Letters · 2001 · 275 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

D. D. Koleske, A. E. Wickenden, R.L. Henry et al. · Journal of Crystal Growth · 2002 · 267 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +7

GaN decomposition in H2 and N2 at MOVPE temperatures and pressures

D. D. Koleske, A. E. Wickenden, R.L. Henry et al. · Journal of Crystal Growth · 2001 · 228 citations

Wide-bandgap Semiconductor, Chemical Engineering, Engineering +8