Microwave performance of GaN MESFETs

Abstract

GaN MESFETs have been fabricated with a 0.25 µm thick channel on a high resistivity GaN layer grown by metal organic vapour phase epitaxy. These devices have a transconductance of 20 mS/mm. For a 0.7 µm gate length device, the measured fT and fmax were 8 and 17 GHz, respectively.