Heterostructure Transistors

Heterostructure Transistors is a semiconductor device that consists of a transistor structure incorporating heterojunctions between different semiconductor materials to enhance carrier confinement and improve high-frequency and high-speed performance compared to homojunction transistors.

1.5K

Publications

67.4K

Citations

5.2K

Authors

782

Institutions

Publications per year

2017–2026

268

Variants

Heterojunction Transistors

Authors

5.2K

  1. MS
    M. S. Shur

    Rensselaer Polytechnic Institute, United States

    62 publications · 5.4K citations

    36

    h-index

  2. RG
    R. Gaška

    Rensselaer Polytechnic Institute, United States

    34 publications · 3.3K citations

    26

    h-index

  3. GS
    G. Simin

    University of South Carolina, United States

    33 publications · 2.7K citations

    24

    h-index

  4. UK
    Umesh K. Mishra

    University of California, Santa Barbara, United States

    28 publications · 2.1K citations

    20

    h-index

  5. XH
    X. Hu

    Sensor Electronic Technology (United States), United States

    23 publications · 2.6K citations

    20

    h-index

1–5 of 5.2K

Venues

  1. IEEE Electron Device Letters

    211 publications · 11.2K citations

    62

    h-index

  2. Applied Physics Letters

    231 publications · 13.7K citations

    59

    h-index

  3. IEEE Transactions on Electron Devices

    150 publications · 6.7K citations

    45

    h-index

  4. Japanese Journal of Applied Physics

    JJAP · 83 publications · 2.6K citations

    29

    h-index

  5. Journal of Applied Physics

    61 publications · 2.9K citations

    27

    h-index

1–5