A. Corrion

Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

K. Shinohara, D. Regan, Yan Tang et al. · IEEE Transactions on Electron Devices · 2013 · 482 citations

Wide-bandgap Semiconductor, Engineering, Innovative Device +16

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

Rongming Chu, A. Corrion, M Chen et al. · IEEE Electron Device Letters · 2011 · 348 citations

Semiconductor Technology, Semiconductor Devices, Electrical Engineering +9

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With <inline-formula> <tex-math notation="LaTeX">$f_{T}/f_{\mathrm {max}}$ </tex-math></inline-formula> of 454/444 GHz

Yan Tang, K. Shinohara, D. Regan et al. · IEEE Electron Device Letters · 2015 · 291 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy

Aaron R. Arehart, A. Corrion, C. Poblenz et al. · Applied Physics Letters · 2008 · 95 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16

Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency

K. Shinohara, D. Regan, A. Corrion et al. · 2011 · 95 citations

Semiconductors, Aggressive Lateral Scaling, Electrical Engineering +11