Yan Tang

Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

K. Shinohara, D. Regan, Yan Tang et al. · IEEE Transactions on Electron Devices · 2013 · 482 citations

Wide-bandgap Semiconductor, Engineering, Innovative Device +16

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With <inline-formula> <tex-math notation="LaTeX">$f_{T}/f_{\mathrm {max}}$ </tex-math></inline-formula> of 454/444 GHz

Yan Tang, K. Shinohara, D. Regan et al. · IEEE Electron Device Letters · 2015 · 291 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Ka-Band LNA MMIC's Realized in Fmax > 580 GHz GaN HEMT Technology

M. Micovic, David F. Brown, D. Regan et al. · 2016 · 52 citations

Frequency Band, Electrical Engineering, Millimeter Wave Technology +13

Novel Asymmetric Slant Field Plate Technology for High-Speed Low-Dynamic R_on E/D-mode GaN HEMTs

Joel Wong, K. Shinohara, A. Corrion et al. · IEEE Electron Device Letters · 2016 · 42 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +14

High-Speed 501-Stage DCFL GaN Ring Oscillator Circuits

A. Corrion, K. Shinohara, D. Regan et al. · IEEE Electron Device Letters · 2013 · 33 citations

Gan Circuit, Electrical Engineering, Engineering +9