D. Regan - Concepedia

Concepedia

Author

D. Regan

HRL Laboratories (United States)

Also Known As

D. C. Regan, D. Regan, D.C. Regan, Dean C. Regan, Dean Regan

29

Publications

1.6K

Citations

17

H-Index

34

Concepts

All Affiliations

HRL Laboratories (United States)University of California San Diego Jet Propulsion Laboratory Lake Land College Teledyne Technologies (United States)

DR

About

D. Regan is an author at HRL Laboratories (United States) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	17	1.5K
2	Electrical Engineering	16	16	1.5K
3	Applied Physics	14	14	1.4K
4	Physics	4	4	658
5	Materials Science	1	1	38

D. Regan

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19

Publications

1.6K

Citations

17

H-Index

	Year	Citations
Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications K. Shinohara, D. Regan, Yan Tang, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringInnovative DeviceOptoelectronic DevicesQuantum Engineering	2013	482
Ultrahigh-Speed GaN High-Electron-Mobility Transistors With <inline-formula> <tex-math notation="LaTeX">$f_{T}/f_{\mathrm {max}}$ </tex-math></inline-formula> of 454/444 GHz Yan Tang, K. Shinohara, D. Regan, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringHigh-speed ElectronicsRf Semiconductor	2015	291
Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency K. Shinohara, D. Regan, A. Corrion, SemiconductorsAggressive Lateral ScalingElectrical EngineeringWide-bandgap SemiconductorEngineering	2011	95
GaN Technology for E, W and G-Band Applications A. Margomenos, A. Kurdoghlian, M. Micovic, Wide-bandgap SemiconductorElectrical EngineeringGan TechnologyEngineeringApplied Physics	2014	95
High frequency GaN HEMTs for RF MMIC applications M. Micovic, David F. Brown, D. Regan, Frequency BandWide-bandgap SemiconductorElectrical EngineeringEngineeringRf Mmic Applications	2016	91
Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz K. Shinohara, D. Regan, I. Milosavljevic, IEEE Electron Device Letters Wide-bandgap SemiconductorAggressive Lateral ScalingElectrical EngineeringSemiconductor TechnologyGan Hemts	2011	83
Self-aligned-gate GaN-HEMTs with heavily-doped n<sup>&#x002B;</sup>-GaN ohmic contacts to 2DEG K. Shinohara, D. Regan, A. Corrion,	2012	68
Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm $g_{m}$ and 112-GHz $f_{T}$ A. Corrion, K. Shinohara, D. Regan, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride	2010	56
220GHz f<inf>T</inf> and 400GHz f<inf>max</inf> in 40-nm GaN DH-HEMTs with re-grown ohmic K. Shinohara, A. Corrion, D. Regan, SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic Devices40-Nm Gan Dh-hemts	2010	55
Ka-Band LNA MMIC's Realized in Fmax > 580 GHz GaN HEMT Technology M. Micovic, David F. Brown, D. Regan, Frequency BandElectrical EngineeringMillimeter Wave TechnologyEngineeringRf Semiconductor	2016	52

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