D. Regan

Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

K. Shinohara, D. Regan, Yan Tang et al. · IEEE Transactions on Electron Devices · 2013 · 482 citations

Wide-bandgap Semiconductor, Engineering, Innovative Device +16

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With <inline-formula> <tex-math notation="LaTeX">$f_{T}/f_{\mathrm {max}}$ </tex-math></inline-formula> of 454/444 GHz

Yan Tang, K. Shinohara, D. Regan et al. · IEEE Electron Device Letters · 2015 · 291 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency

K. Shinohara, D. Regan, A. Corrion et al. · 2011 · 95 citations

Semiconductors, Aggressive Lateral Scaling, Electrical Engineering +11

GaN Technology for E, W and G-Band Applications

A. Margomenos, A. Kurdoghlian, M. Micovic et al. · 2014 · 95 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Technology +11

High frequency GaN HEMTs for RF MMIC applications

M. Micovic, David F. Brown, D. Regan et al. · 2016 · 91 citations

Frequency Band, Wide-bandgap Semiconductor, Electrical Engineering +11