D. Regan

Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

K. Shinohara, D. Regan, Yan Tang et al. · IEEE Transactions on Electron Devices · 2013 · 494 citations

Engineering, Electrical Engineering, Materials Science +17

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With <inline-formula> <tex-math notation="LaTeX">$f_{T}/f_{\mathrm {max}}$ </tex-math></inline-formula> of 454/444 GHz

Yan Tang, K. Shinohara, D. Regan et al. · IEEE Electron Device Letters · 2015 · 297 citations

Engineering, Electrical Engineering, Materials Science +17

Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency

K. Shinohara, D. Regan, A. Corrion et al. · 2011 · 98 citations

Engineering, Electrical Engineering, Materials Science +16

GaN Technology for E, W and G-Band Applications

A. Margomenos, A. Kurdoghlian, M. Micovic et al. · 2014 · 95 citations

Engineering, Electrical Engineering, Materials Science +17

High frequency GaN HEMTs for RF MMIC applications

M. Micovic, David F. Brown, D. Regan et al. · 2016 · 94 citations

Engineering, Electrical Engineering, Materials Science +17