K. Shinohara

Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

K. Shinohara, D. Regan, Yan Tang et al. · IEEE Transactions on Electron Devices · 2013 · 482 citations

Wide-bandgap Semiconductor, Engineering, Innovative Device +16

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With <inline-formula> <tex-math notation="LaTeX">$f_{T}/f_{\mathrm {max}}$ </tex-math></inline-formula> of 454/444 GHz

Yan Tang, K. Shinohara, D. Regan et al. · IEEE Electron Device Letters · 2015 · 291 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz

Y. Yamashita, Akira Endoh, K. Shinohara et al. · IEEE Electron Device Letters · 2002 · 289 citations

Wide-bandgap Semiconductor, Electrical Engineering, Millimeter Wave Technology +14

In situ observation of the water distribution across a PEFC using high resolution neutron radiography

Pierre Boillat, Denis Kramer, Bernhard C. Seyfang et al. · Electrochemistry Communications · 2008 · 219 citations · Full text

Engineering, Radiation Detection, Nuclear Physics +6

Reactive coevaporation of YBaCuO superconducting films

V. Matijašević, P. Rosenthal, K. Shinohara et al. · Journal of materials research/Pratt's guide to venture capital sources · 1991 · 179 citations

Superconducting Material, High-tc Superconductivity, Engineering +7