IEEE Electron Device Letters · 2002 · 289 citations · 11 references
EngineeringElectrical EngineeringPhysicsElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationHigh-frequency Semiconductor DevicesMetal-oxide-semiconductor Field-effect TransistorsMicrowave Semiconductor DevicesNanoelectronicsSemiconductor PhysicsCutoff FrequencyElectron MobilityHigh-electron-mobility TransistorsMicrowave TransistorsMillimeter-wave TransistorsTerahertz Semiconductor Devices
We fabricated decananometer-gate pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As high-electron mobility transistors (HEMTs) with a very short gate-channel distance. We obtained a cutoff frequency f/sub T/ of 562 GHz for a 25-nm-gate HEMT. This f/sub T/ is the highest value ever reported for any transistor. The ultrahigh f/sub T/ of our HEMT can be explained by an enhanced electron velocity under the gate, which was a result of reducing the gate-channel distance.
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