T. Mimura

Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz

Y. Yamashita, Akira Endoh, K. Shinohara et al. · IEEE Electron Device Letters · 2002 · 289 citations

Engineering, Electrical Engineering, Physics +15

Short-channel effects in subquarter-micrometer-gate HEMTs: simulation and experiment

Yuji Awano, M. Kosugi, K. Kosemura et al. · IEEE Transactions on Electron Devices · 1989 · 169 citations

Engineering, Electrical Engineering, Electronic Materials +15

The early history of the high electron mobility transistor (HEMT)

T. Mimura · IEEE Transactions on Microwave Theory and Techniques · 2002 · 155 citations

Engineering, Electrical Engineering, Materials Science +13

547-GHz<tex>$f_t$</tex>In<tex>$_0.7$</tex>Ga<tex>$_0.3$</tex>As–In<tex>$_0.52$</tex>Al<tex>$_0.48$</tex>As HEMTs With Reduced Source and Drain Resistance

K. Shinohara, Y. Yamashita, Akira Endoh et al. · IEEE Electron Device Letters · 2004 · 116 citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN/GaN MIS-HFETs with f/sub T/ of 163 GHz using cat-CVD SiN gate-insulating and passivation Layers

Masataka Higashiwaki, Toshiaki Matsui, T. Mimura · IEEE Electron Device Letters · 2005 · 113 citations

Engineering, Electrical Engineering, Materials Science +17