K. Kosemura

Short-channel effects in subquarter-micrometer-gate HEMTs: simulation and experiment

Yuji Awano, M. Kosugi, K. Kosemura et al. · IEEE Transactions on Electron Devices · 1989 · 169 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +12

Room temperature operation of Si single-electron memory with self-aligned floating dot gate

Anri Nakajima, T. Futatsugi, K. Kosemura et al. · Applied Physics Letters · 1997 · 162 citations

Si Single-electron Memory, Non-volatile Memory, Electrical Engineering +12

Si single electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process

Anri Nakajima, T. Futatsugi, K. Kosemura et al. · Applied Physics Letters · 1997 · 48 citations

Id Oscillation, Non-volatile Memory, Electrical Engineering +14

Noise Perfomance of Microwave HEMT

K. Joshin, T. Mimura, M. Ninori et al. · 2005 · 20 citations

Room Temperature, Electrical Engineering, Semiconductor Device +12

Si single-electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process

Anri Nakajima, T. Futatsugi, K. Kosemura et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 18 citations

Non-volatile Memory, Coulomb Oscillation, Engineering +19