Si single electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process

Abstract

We fabricated a Si single electron tunneling transistor which has a nanoscale floating dot gate stacked on a Coulomb island by a self-aligned process. This device exhibits drain current (Id) oscillations due to the Coulomb blockade effect and quantized threshold voltage (Vth) shifts resulting from a single electron tunneling from the channel to the floating dot gate. The high on/off current ratio of the Id oscillation combined with the quantized Vth shifts leads to the possibility of developing ultralow power consumption memory.