T. Fukano

Room temperature operation of Si single-electron memory with self-aligned floating dot gate

Anri Nakajima, T. Futatsugi, K. Kosemura et al. · Applied Physics Letters · 1997 · 163 citations

Engineering, Electrical Engineering, Materials Science +14

Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V

K. Tsunoda, Kentaro Kinoshita, Hideyuki Noshiro et al. · 2007 · 155 citations

Engineering, Electrical Engineering, Materials Science +17

Si single electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process

Anri Nakajima, T. Futatsugi, K. Kosemura et al. · Applied Physics Letters · 1997 · 48 citations

Engineering, Electrical Engineering, Materials Science +17

50-nm gate Schottky source/drain p-MOSFETs with a SiGe channel

Keiji Ikeda, Y. Yamashita, Akira Endoh et al. · IEEE Electron Device Letters · 2002 · 36 citations

Engineering, Electrical Engineering, Microelectronics +16

21 psec switching 0.1 μm-CMOS at room temperature using high performance Co salicide process

Tatsuya Yamazaki, Kenichi Gotō, T. Fukano et al. · 2002 · 26 citations

Engineering, Electrical Engineering, Low-power Design +13