Anri Nakajima

Room temperature operation of Si single-electron memory with self-aligned floating dot gate

Anri Nakajima, T. Futatsugi, K. Kosemura et al. · Applied Physics Letters · 1997 · 162 citations

Si Single-electron Memory, Non-volatile Memory, Electrical Engineering +12

Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown SiO2 layers formed via low energy ion implantation

Anri Nakajima, T. Futatsugi, Hiroshi Nakao et al. · Journal of Applied Physics · 1998 · 72 citations

Engineering, Sn Nanocrystals, Clear Coulomb +17

Si Quantum Dot Formation with Low-Pressure Chemical Vapor Deposition

Anri Nakajima, Yoshihiro Sugita, Kazuo Kawamura et al. · Japanese Journal of Applied Physics · 1996 · 61 citations

Engineering, Optoelectronic Devices, Silicon On Insulator +17

Low-temperature formation of silicon nitride gate dielectrics by atomic-layer deposition

Anri Nakajima, Takashi Yoshimoto, Toshirou Kidera et al. · Applied Physics Letters · 2001 · 55 citations · Full text

Materials Science, Semiconductor Technology, Electrical Engineering +14

Coulomb blockade in Sb nanocrystals formed in thin, thermally grown SiO2 layers by low-energy ion implantation

Anri Nakajima, Hiroshi Nakao, Hiroaki Ueno et al. · Applied Physics Letters · 1998 · 49 citations

Engineering, Coulomb Blockade, Silicon On Insulator +18