Toshirou Kidera - Concepedia

Author

Toshirou Kidera

Hiroshima University

Also Known As

Toshirou Kidera

Publications

170

Citations

H-Index

Concepts

All Affiliations

Hiroshima University

About

Toshirou Kidera is an author at Hiroshima University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	170
2	Applied Physics	6	6	170
3	Electrical Engineering	6	6	170
4	Materials Science	6	6	170
5	Materials Engineering	1	1	37

Toshirou Kidera

Publications

170

Citations

H-Index

Page 1

	Year	Citations
Low-temperature formation of silicon nitride gate dielectrics by atomic-layer deposition Anri Nakajima, Takashi Yoshimoto, Toshirou Kidera, Applied Physics Letters Materials ScienceSemiconductor TechnologyElectrical EngineeringEngineeringStress-induced Leakage Current	2001	55
NH 3 -annealed atomic-layer-deposited silicon nitride as a high-<i>k</i> gate dielectric with high reliability Anri Nakajima, Quazi D. M. Khosru, Takashi Yoshimoto, Applied Physics Letters Materials SciencePotential Gate DielectricElectrical EngineeringGate DielectricsLow Temperatures	2002	44
Atomic-layer deposition of ZrO2 with a Si nitride barrier layer Anri Nakajima, Toshirou Kidera, Hiroyuki Ishii, Applied Physics Letters EngineeringOptoelectronic DevicesChemical DepositionSemiconductor NanostructuresSemiconductors	2002	37
Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires Kensaku Kawamura, Toshirou Kidera, Anri Nakajima, Journal of Applied Physics Electrical Conduction MechanismEngineeringCoulomb OscillationsSilicon On InsulatorGrain Size	2002	12
Low-temperature formation of highly reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal–oxide–semiconductor technology Anri Nakajima, Quazi D. M. Khosru, Takashi Yoshimoto, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Ald Silicon NitrideEngineeringThickness TeqOptoelectronic DevicesSemiconductor Device	2002	11
Characterization of atomic-layer-deposited silicon nitride/SiO2 stacked gate dielectrics for highly reliable <i>p</i>-metal-oxide-semiconductor field-effect transistors Anri Nakajima, Takashi Yoshimoto, Toshirou Kidera, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Ald Silicon NitrideEngineeringOptoelectronic DevicesIntegrated CircuitsThin Film Process Technology	2001	11

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