Toshirou Kidera

Low-temperature formation of silicon nitride gate dielectrics by atomic-layer deposition

Anri Nakajima, Takashi Yoshimoto, Toshirou Kidera et al. · Applied Physics Letters · 2001 · 55 citations · Full text

Materials Science, Semiconductor Technology, Electrical Engineering +14

NH 3 -annealed atomic-layer-deposited silicon nitride as a high-<i>k</i> gate dielectric with high reliability

Anri Nakajima, Quazi D. M. Khosru, Takashi Yoshimoto et al. · Applied Physics Letters · 2002 · 44 citations

Materials Science, Potential Gate Dielectric, Electrical Engineering +13

Atomic-layer deposition of ZrO2 with a Si nitride barrier layer

Anri Nakajima, Toshirou Kidera, Hiroyuki Ishii et al. · Applied Physics Letters · 2002 · 37 citations

Engineering, Optoelectronic Devices, Chemical Deposition +17

Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires

Kensaku Kawamura, Toshirou Kidera, Anri Nakajima et al. · Journal of Applied Physics · 2002 · 12 citations · Full text

Electrical Conduction Mechanism, Engineering, Coulomb Oscillations +20

Low-temperature formation of highly reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal–oxide–semiconductor technology

Anri Nakajima, Quazi D. M. Khosru, Takashi Yoshimoto et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2002 · 11 citations

Ald Silicon Nitride, Engineering, Thickness Teq +17