K. Tsunoda

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

Kentaro Kinoshita, K. Tsunoda, Yoshihiro Sato et al. · Applied Physics Letters · 2008 · 268 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +13

Bipolar resistive switching in polycrystalline TiO2 films

K. Tsunoda, Y. Fukuzumi, John R. Jameson et al. · Applied Physics Letters · 2007 · 215 citations

Materials Science, Tio2 Matrix, Electrical Engineering +14

Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V

K. Tsunoda, Kentaro Kinoshita, Hideyuki Noshiro et al. · 2007 · 155 citations

Materials Science, Low Power, Electrical Engineering +14

Demonstration of non-volatile working memory through interface engineering in STT-MRAM

Chikako Yoshida, Takao Ochiai, Y. Iba et al. · 2012 · 31 citations

Non-volatile Memory, Magnetic Properties, Engineering +24

Reduction of Reset Current in NiO-ReRAM Brought about by Ideal Current Limiter

Kentaro Kinoshita, K. Tsunoda, Yoshihiro Sato et al. · 2007 · 19 citations

Low-power Electronics, Electrical Engineering, Cell Transistor +10