K. Tsunoda

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

Kentaro Kinoshita, K. Tsunoda, Yoshihiro Sato et al. · Applied Physics Letters · 2008 · 270 citations

Engineering, Electrical Engineering, Materials Science +13

Bipolar resistive switching in polycrystalline TiO2 films

K. Tsunoda, Y. Fukuzumi, John R. Jameson et al. · Applied Physics Letters · 2007 · 215 citations

Natural Sciences, Materials Engineering, Materials Science +17

Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V

K. Tsunoda, Kentaro Kinoshita, Hideyuki Noshiro et al. · 2007 · 155 citations

Engineering, Electrical Engineering, Materials Science +17

Demonstration of non-volatile working memory through interface engineering in STT-MRAM

Chikako Yoshida, Takao Ochiai, Y. Iba et al. · 2012 · 31 citations

Natural Sciences, Materials Engineering, Materials Science +16

Reduction of Reset Current in NiO-ReRAM Brought about by Ideal Current Limiter

Kentaro Kinoshita, K. Tsunoda, Yoshihiro Sato et al. · 2007 · 19 citations

Engineering, Electrical Engineering, Electronic Materials +11