Reduction of Reset Current in NiO-ReRAM Brought about by Ideal Current Limiter

Abstract

In this paper, we fabricated 1T1R NiO-ReRAM test circuits based on 0.18 mum CMOS technology and observed notable suppression of I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">reset</sub> by imposing current compliance I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">comp</sub> using a cell transistor. Reducing the stray capacitance between Pt/NiO/Pt and the cell transistor used as a current limiter is crucial in this issue. This enabled the systematic measurement of I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">comp</sub> dependence of l <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">reset</sub> for I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">comp</sub> < 1 mA and I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">reset</sub> ap I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">comp</sub> was observed for 150 muA les I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">comp</sub> les950 muA.