Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

Kentaro Kinoshita, K. Tsunoda, Yoshihiro Sato, +4

Applied Physics Letters

Hardware SecurityNon-volatile MemoryElectrical EngineeringEngineeringPhysics +11

Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide

Kentaro Kinoshita, Tomoyuki Tamura, M. Aoki, +2

Applied Physics Letters

Non-volatile MemoryEngineeringFerroelectric Random-access MemoryData Retention PropertiesResistor +18

Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V

K. Tsunoda, Kentaro Kinoshita, Hideyuki Noshiro, +9

Materials ScienceLow PowerElectrical EngineeringCell TransistorEngineering +12

High-speed (10 Gbit/s) and low-drive-voltage (1 V peak to peak) InGaAs/InGaAsP MQW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure

M. Aoki, Masaki Suzuki, Masaharu Takahashi, +4

Electronics Letters

V PeakPhotonicsElectrical EngineeringElectroabsorption ModulationEngineering +11

Semimetallic Hall properties of PbTe-SnTe superlattice

Akihiro Ishida, M. Aoki, H. Fujiyasu

Journal of Applied Physics

Materials ScienceSpintronicsType-ii SuperlatticeSuperconducting MaterialEngineering +9

Superconducting behavior in PbTeSnTe superlattices

K. Murase, Shuichi Ishida, S. Takaoka, +4

Surface Science

Sn diffusion effects on x-ray diffraction patterns of Pb1−<i>x</i>Sn<i>x</i>Te–PbSe<i>y</i>Te1−<i>y</i> superlattices

Akihiro Ishida, M. Aoki, H. Fujiyasu

Journal of Applied Physics

X-ray CrystallographyMaterials ScienceMaterials EngineeringLarge DiffusionSn Diffusion Effects +13

Stimulated emission of near-infrared radiation by current injection into silicon (100) quantum well

Shinichi Saito, Yuji Suwa, H. Arimoto, +9

Applied Physics Letters

PhotonicsElectrical EngineeringPhotoluminescenceEngineeringPhysics +12

Anti-phase direct bonding and its application to the fabrication of InP-based 1.55 μm wavelength lasers on GaAs substrates

Y. Okuno, K. Uomi, M. Aoki, +3

Applied Physics Letters

μM Wavelength LasersEngineeringLaser ScienceLaser ApplicationsLaser Material +14

Wide-temperature-range operation of 1.3-μm beam expander-integrated laser diodes grown by in-plane thickness control MOVPE using a silicon shadow mask

M. Aoki, M. Komori, Makoto Suzuki, +5

IEEE Photonics Technology Letters

Short Wavelength OpticOptical MaterialsEngineeringLaser ScienceLaser Applications +19