M. Aoki

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

Kentaro Kinoshita, K. Tsunoda, Yoshihiro Sato et al. · Applied Physics Letters · 2008 · 268 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +13

Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide

Kentaro Kinoshita, Tomoyuki Tamura, M. Aoki et al. · Applied Physics Letters · 2006 · 213 citations

Non-volatile Memory, Engineering, Ferroelectric Random-access Memory +20

Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V

K. Tsunoda, Kentaro Kinoshita, Hideyuki Noshiro et al. · 2007 · 155 citations

Materials Science, Low Power, Electrical Engineering +14

High-speed (10 Gbit/s) and low-drive-voltage (1 V peak to peak) InGaAs/InGaAsP MQW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure

M. Aoki, Masaki Suzuki, Masaharu Takahashi et al. · Electronics Letters · 1992 · 55 citations

V Peak, Photonics, Electrical Engineering +13

Semimetallic Hall properties of PbTe-SnTe superlattice

Akihiro Ishida, M. Aoki, H. Fujiyasu · Journal of Applied Physics · 1985 · 48 citations

Materials Science, Spintronics, Type-ii Superlattice +11