Kentaro Kinoshita - Concepedia

Author

Kentaro Kinoshita

Also Known As

K . Kinoshita, K KINOSHITA, K Kinoshita, K. Jr. Kinoshita, K. KINOSHITA, K. Kinoshita, K.Jr. Kinoshita, Kei Kinoshita, Keizo KINOSHITA, Keizo Kinoshita

380

Publications

3.4K

Citations

H-Index

Concepts

All Affiliations

Tottori University Fujitsu (Japan)Tokyo University of Science NEC (Japan)Tohoku University

About

Kentaro Kinoshita is an author at Tottori University specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	33	1.9K
2	Applied Physics	16	22	1.6K
3	Chemistry	5	5	269
4	Natural Sciences	4	4	303
5	Chemical Engineering	3	3	69

Kentaro Kinoshita

Publications

2.2K

Citations

H-Index

Page 1

	Year	Citations
Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance Kentaro Kinoshita, K. Tsunoda, Yoshihiro Sato, Applied Physics Letters Hardware SecurityNon-volatile MemoryElectrical EngineeringEngineeringPhysics	2008	268
Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide Kentaro Kinoshita, Tomoyuki Tamura, M. Aoki, Applied Physics Letters Non-volatile MemoryEngineeringFerroelectric Random-access MemoryData Retention PropertiesResistor	2006	213
Observation of the Decay B0J M. C. Chang, K. Abe, I. Adachi, Physical Review Letters Nuclear PhysicsPhysicsNatural SciencesParticle PhysicsMeson Spectroscopy	2007	207
Direct observation of oxygen movement during resistance switching in NiO/Pt film Chikako Yoshida, Kentaro Kinoshita, Takahiro Yamasaki, Applied Physics Letters Materials ScienceLocal Writing ProcessEngineeringPhysicsOxidation Resistance	2008	176
XPS study from a clean surface of Al2O3 single crystals Tuguhiro TAGO, Noriyuki Kataoka, Hiromi Tanaka, Procedia Engineering Materials ScienceMaterials EngineeringSingle CrystalsAluminium NitrideAl2o3 Single Crystals	2017	162
Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V K. Tsunoda, Kentaro Kinoshita, Hideyuki Noshiro, Materials ScienceLow PowerElectrical EngineeringCell TransistorEngineering	2007	155
Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model Yoshihiro Sato, Kentaro Kinoshita, Masaki Aoki, Applied Physics Letters EngineeringBinary MetalThermal ConductivityNanoelectronicsThermal Conduction	2007	118
Sub-$\hbox{100-}\mu\hbox{A}$ Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET Yoshihiro Sato, Koji Tsunoda, Kentaro Kinoshita, IEEE Transactions on Electron Devices Electrical ResistanceNon-volatile MemoryElectrical EngineeringCell TransistorEngineering	2008	93
Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal Oxides Kentaro Kinoshita, Tetsuro Tamura, Masaki Aoki, Japanese Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringNon-volatile MemoryEngineering	2006	82
Comprehensive study of CoFeB-MgO magnetic tunnel junction characteristics with single- and double-interface scaling down to 1X nm H. Sato, Tatsuya Yamamoto, Michihiko Yamanouchi, Magnetic PropertiesEngineeringMagnetic ResonanceMagnetic MaterialsMagnetoresistance	2013	59

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