Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

Abstract

The dependence of the relationship between the reset current Ireset and the compliance current Icomp (Ireset-Icomp characteristic) of a Pt∕NiOx∕Pt structure on the parasitic capacitance between the Pt∕NiOx∕Pt structure and a current limiter C was measured for Icomp<1mA. It was clarified that C deviated the Ireset-Icomp characteristic from the ideal linear relationship expected for C=0 and Ireset saturated at higher Icomp for larger C. This is attributed to a transient current flowing through C when the forming or set transitions occurred. The relationship of Ireset≈Icomp was maintained down to Icomp=150μA in the 1T1R cell with very small C.