Direct observation of oxygen movement during resistance switching in NiO/Pt film

Abstract

We demonstrate that both a low resistance state and a high resistance state can be written by bipolar voltage application in a local region of NiO/Pt films by using conducting atomic force microscopy. To investigate how oxygen played a role in the resistance switching phenomenon, a local writing process in O18 tracer gas atmosphere was carried out and the composition change was examined by time-of-flight secondary ion mass spectroscopy. As a result, it was revealed that oxygen moves to the anode side, and the composition of the NiO surface might change thereby causing the change in resistance.