Concepedia

Millimeter-wave Transistors

Millimeter-Wave Transistors is a class of high-frequency semiconductor devices designed to operate efficiently at millimeter-wave frequencies, typically in the 30 GHz to 300 GHz range, distinguished by their ability to amplify or switch signals in this band with high gain, low noise, and minimal parasitic effects.

408

Publications

15K

Citations

1.8K

Authors

261

Institutions

Publications per year

2017–2026

59

Parents

Publications

408

75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

G.L. Patton, J.H. Comfort, B.S. Meyerson et al. · IEEE Electron Device Letters · 1990 · 480 citations

, , +17

Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz

Y. Yamashita, Akira Endoh, K. Shinohara et al. · IEEE Electron Device Letters · 2002 · 289 citations

, , +15

Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz

K. Ueda, Makoto Kasu, Y. Yamauchi et al. · IEEE Electron Device Letters · 2006 · 274 citations

, , +17

Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology

B. Jagannathan, Mahmoud Khater, F. Pagette et al. · IEEE Electron Device Letters · 2002 · 262 citations

, , +15

Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz

R. Lai, X. B. Mei, W.R. Deal et al. · 2007 · 254 citations

, , +17

1–5 of 408

Authors

1.8K

  1. PS
    P.M. Smith

    General Electric (United States), United States

    18 publications · 593 citations

    15

    h-index

  2. PC
    P.C. Chao

    General Electric (United States), United States

    16 publications · 565 citations

    14

    h-index

  3. MR
    M.J.W. Rodwell

    University of California, Santa Barbara, United States

    16 publications · 591 citations

    14

    h-index

  4. WD
    W.R. Deal

    Northrop Grumman (United States), United States

    14 publications · 587 citations

    13

    h-index

  5. KD
    K.H.G. Duh

    General Electric (United States), United States

    11 publications · 426 citations

    11

    h-index

1–5 of 1.8K

Institutions

261

  1. University of California, Santa Barbara

    Santa Barbara, United States

    18 h-index

    112 publications

    6.3K citations

  2. IBM (United States)

    Armonk, United States

    15 h-index

    137 publications

    11.3K citations

  3. Fraunhofer Institute for Applied Solid State Physics

    Freiburg im Breisgau, Germany

    14 h-index

    64 publications

    2.9K citations

  4. HRL Laboratories (United States)

    Malibu, United States

    14 h-index

    99 publications

    4.3K citations

  5. General Electric (United States)

    Boston, United States

    13 h-index

    86 publications

    3.1K citations

  6. Northrop Grumman (United States)

    Falls Church, United States

    13 h-index

    103 publications

    5.3K citations

  7. Jet Propulsion Laboratory

    Pasadena, United States

    12 h-index

    40 publications

    2.1K citations

  8. Fujitsu (Japan)

    Kawasaki, Japan

    11 h-index

    46 publications

    3.4K citations

1–8 of 261

Venues

  1. IEEE Electron Device Letters

    82 publications · 4.9K citations

    36

    h-index

  2. IEEE Transactions on Electron Devices

    28 publications · 1.6K citations

    21

    h-index

  3. 15

    h-index

  4. Electronics Letters

    17 publications · 414 citations

    13

    h-index

  5. IEEE Microwave and Wireless Components Letters

    11 publications · 245 citations

    11

    h-index

1–5