P.C. Chao

W-band low-noise InAlAs/InGaAs lattice-matched HEMTs

P.C. Chao, A.J. Tessmer, K.H.G. Duh et al. · IEEE Electron Device Letters · 1990 · 205 citations

Electrical Engineering, Millimeter Wave Technology, Engineering +8

W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/

P.M. Smith, Shikuan Liu, Ming-Yih Kao et al. · IEEE Microwave and Guided Wave Letters · 1995 · 177 citations

Ghz F/sub Max/, Wide-bandgap Semiconductor, Engineering +16

DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs

P.C. Chao, M. S. Shur, R. C. Tiberio et al. · IEEE Transactions on Electron Devices · 1989 · 146 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +10

A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMT

K.H.G. Duh, P.C. Chao, S.M.J. Liu et al. · IEEE Microwave and Guided Wave Letters · 1991 · 135 citations

Super Low-noise 0.1, Electrical Engineering, Engineering +10

Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor

T. Henderson, M.I. Aksun, C. K. Peng et al. · IEEE Electron Device Letters · 1986 · 124 citations

Wireless Communications, Excellent Dc, Engineering +21