IEEE Microwave and Guided Wave Letters · 1991 · 135 citations · 8 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Semiconductor DevicesNoise In Electronic DevicesNoise In Semiconductor DevicesSemiconductor PhysicsGainGallium Nitride Power AmplifiersHigh-gain AmplifiersLow-noise AmplifiersLow-noise DesignMicrowave Amplifier CharacterizationNoise In AmplifiersNoise Performance Analysis
It is reported that 0.1- mu m T-gate InAlAs-InGaAs-InP HEMTs have exhibited state-of-the-art noise and gain performance well up to 100 GHz. Minimum noise figures of 0.8 and 1.2 dB with gains of 8.9 and 7.2 dB have been measured at 60 and 94 GHz, respectively. A high-performance W-band three-stage amplifier has been built using these devices with noise figures between 3.2-3.5 dB and a gain of 17.5+or-0.4 dB from 91 to 96 GHz. A 6-dB improvement in the 1-dB compression characteristic of the amplifier had been achieved with a GaAs pseudomorphic HEMT in the third stage.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
8
The determination of device noise parameters
Richard Q. Lane · Proceedings of the IEEE · 1969 · 275 citations
Engineering, Computer Engineering, Electrical Engineering +16
94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTs
K.L. Tan, R.M. Dia, D.C. Streit et al. · IEEE Electron Device Letters · 1990 · 88 citations
W-band InGaAs HEMT low noise amplifiers
K.H.G. Duh, P.C. Chao, P. Ho et al. · 1990 · 67 citations
Extremely high gain, low noise InAlAs/InGaAs HEMTs grown by molecular beam epitaxy
P. Ho, P.C. Chao, K.H.G. Duh et al. · 2003 · 26 citations